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The Oriental Semiconductor SiC MOSFET products have successfully completed platform reliability qualification. All reliability test items passed with zero failures, demonstrating excellent performance.

The maximum forward VGS withstand voltage of Oriental Semiconductor products is 2V to 4V higher than that of competing products with the same specifications, providing superior gate reliability during forward turn-on.

The maximum reverse VGS withstand voltage of Oriental Semiconductor products is 4V to 5V higher than that of competing products with the same specifications, providing superior gate reliability during negative voltage turn-off.

Oriental Semiconductor 1200V SiC MOSFETs passed 1000-hour HTGB+ testing at 175°C with +22V gate bias (100% VGS+). The devices showed no failures and a VTH positive shift of <5%, indicating superior stability.

Oriental Semiconductor 1200V SiC MOSFETs passed 1000-hour HTGB- testing at 175°C with -8V gate bias (100% VGS-). The devices showed no failures and a VTH negative shift of <2%, indicating superior stability.

Oriental Semiconductor 1200V SiC MOSFETs passed 1000-hour DGS testing with no failures. The VTH negative shift was only about 4%, indicating superior stability.
DGS Test Condition : Ta=25°C, VGS from VGS(off)min,recom to VGS(on)max, recom, dVGS/dt(at DUT)≥1V/ns and no overshoot, fsw≥50kHz(with duty cycle>20%), VDS=0V

The maximum BVDSS withstand voltage of Oriental Semiconductor products is 30V to 200V higher than that of competing products with the same specifications, providing superior voltage endurance.

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