On-Site at the Summit | Oriental Semi Makes Forward-Layout of SiC for HVDC & AIDC Computing Power Supplies

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Company Founded in 2008, the company has a registered capital of RMB 122,574,975. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.

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All products SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC

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The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.

In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.

Trench MOSFET: Reliable and Trustworthy Performance Through extensive development，we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.

Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.

Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.

When connected in series with a power source, the OSP5050 high side OR-ing FET controller is used in conjunction with an external NMOSFET as an ideal diode rectifier. This OR-ing controller allows MOSFETs to replace diode rectifiers in distribution networks, thereby reducing power loss and voltage drop.

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Application The products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).

Automotive Electronics On-Board Charger (OBC) Automotive DC-DC Converter Automotive Lighting DC-DC Converter Body Domain Controller Electronic Power Steering (EPS) Electronic Water Pumps & Electronic Oil Pumps & Fan Drivers PTC Heater High-Voltage Electric Compressor (HVAC)

Power Supplies for Data Center AIDC Data Center AC-DC Converter DC-DC Converter

Consumer Electronics PD Chargers & Adapters TV Power Supply Printer System Power Tools

Industrial Applications Battery Formation and Testing PV Micro-inverters Residential Energy Storage Inverters String PV Inverters Industrial Power Supplies Charging Pile Power Modules

Household Appliances Vacuum Cleaners Refrigerator Compressors Fan Drivers

Communication Technology Communication Power Supplies DC-DC Converters

Motor Drives Forklift Drivers Aircraft and Drones

Robotics Robotic Vacuum Cleaners Humanoid Robots

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Quality Management Date of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025

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Investor Relations Oriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.

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The summit themed Silicon Carbide Empowers the Future: Innovative Technical Applications for Data Centers, Electric Drives and Energy was successfully held in Shanghai on June 3. Oriental Semi participated prominently with its in-house developed SiC product solutions. Dr. Chen Fan, the company’s R&D Director, delivered a keynote speech entitled Current Status of Domestic SiC Technology and Its Application Progress in Data Centers. Focusing on cutting-edge sectors such as high-voltage power supply for AIDC and solid-state transformers (SST), he detailed the firm’s industrialization achievements of SiC products.

As the construction of AI computing infrastructure speeds up, HVDC is poised to become the mainstream development route for artificial intelligence data centers (AIDC). The Panama architecture is the primary domestic promotion solution, whereas the 800V HVDC architecture standard advocated by NVIDIA is set to lead the global industry trend going forward.
Boasting four core merits including high voltage resistance, high-frequency operation, high-temperature endurance and low power loss, SiC serves as a critical enabler for efficiency upgrading of computing power supplies.
Per statistics released at the summit, the SiC market for AIDC is growing steadily. Substantial volumes of SiC devices are required across four core segments in the full HVDC-powered AIDC supply chain: PSU rectification, DC/DC conversion, bus rectification and SST, rendering this field a key strategic market for domestic semiconductor manufacturers to prioritize breakthroughs.

Leveraging years of in-depth technological expertise and market accumulation in power semiconductors, Oriental Semi has completed the full-chain SiC product layout for HVDC-powered AIDC, covering all application nodes including front-end AC-DC PFC, on-board DC-DC and circuit breakers, with upgraded new products under steady development.
For SST solutions based on CHB topology, the company has developed a comprehensive device portfolio consisting of high-voltage-class SiC MOSFETs, SiC SBDs and SiC JFETs. Its SiC device matching solution for single cabinet is fully mature. With the launch of mass production, the overall component cost is expected to drop significantly in the long run.

Relying on reliable delivery capacity and domestically manufactured SiC products, Oriental Semi has established in-depth cooperation with leading full-server OEM customers in the computing sector. Going forward, the company will keep upgrading its high-voltage SiC devices, further explore market demands from AI servers, liquid-cooled computing power supplies and innovative SST power conversion equipment. It will accelerate the substitution and penetration of domestic SiC solutions in the high-end AIDC supply chain, facilitating the independent upgrading of China’s computing infrastructure.