A New Benchmark for Domestic Substitution: Oriental Semiconductor’s SiC Performance Matches International First-Class Standards, Gaining Recognition from Leading Global Customers

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Company Founded in 2008, the company has a registered capital of RMB 122,531,446. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.

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All products SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC

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The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.

In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.

Trench MOSFET: Reliable and Trustworthy Performance Through extensive development，we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.

Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.

Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.

When connected in series with a power source, the OSP5050 high side OR-ing FET controller is used in conjunction with an external NMOSFET as an ideal diode rectifier. This OR-ing controller allows MOSFETs to replace diode rectifiers in distribution networks, thereby reducing power loss and voltage drop.

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Application The products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).

Automotive Electronics On-Board Charger (OBC) Automotive DC-DC Converter Automotive Lighting DC-DC Converter Body Domain Controller Electronic Power Steering (EPS) Electronic Water Pumps & Electronic Oil Pumps & Fan Drivers PTC Heater High-Voltage Electric Compressor (HVAC)

Power Supplies for Data Center AIDC Data Center AC-DC Converter DC-DC Converter

Consumer Electronics PD Chargers & Adapters TV Power Supply Printer System Power Tools

Industrial Applications Battery Formation and Testing PV Micro-inverters Residential Energy Storage Inverters String PV Inverters Industrial Power Supplies Charging Pile Power Modules

Household Appliances Vacuum Cleaners Refrigerator Compressors Fan Drivers

Communication Technology Communication Power Supplies DC-DC Converters

Motor Drives Forklift Drivers Aircraft and Drones

Robotics Robotic Vacuum Cleaners Humanoid Robots

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Quality Management Date of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025

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Investor Relations Oriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.

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Today, the “Dual Carbon” strategy is driving a profound transformation of the global energy structure and stirring the deep pulse of the global energy landscape. Silicon Carbide (SiC), a gem of third-generation semiconductors, is igniting a revolution in the power electronics industry with its boundary-breaking momentum.

At the forefront of the times, Oriental Semiconductor forges cutting-edge technology with Oriental wisdom and craftsmanship, creating a globally renowned portfolio of superior SiC MOSFETs. Their performance parameters not only resonate with the world’s top standards but also have earned authoritative certifications from global leading power supply giants for their rock-solid reliability. From the efficiency leap in data center HVDC systems to the powerful heartbeat of new energy vehicles; from the green pulse of photovoltaic energy storage to the precise rhythm of industrial motor drives—Oriental Semiconductor uses “China Core” as its pen to deliver disruptive solutions for high-growth sectors, authoring a new chapter in the era of green intelligence.

Performance Beyond Boundaries, Reshaping Industry Standards

Oriental Semiconductor’s SiC MOSFET product portfolio (covering the full voltage platform from 400V to 1700V) redefines the industry benchmark with breakthrough technical specifications:

Gate Voltage Ruggedness Revolution: The maximum forward V_GSrating is 2–4V higher than competing devices of the same class, and the reverse V_GS rating leads by 4–5V. This delivers exceptional stability during high-frequency switching and completely eliminates the risk of gate overvoltage failure.
Voltage Margin Breakthrough: The BV_DSS breakdown voltage exceeds competitors by 30–200V, providing industry-leading system safety margin on the 1200V platform.
Pinnacle of Reliability: Fully passed the 12 most stringent reliability tests from international leading manufacturers (including H3TRB, TC, DGS, HTGB±, etc.), achieving the industry’s highest “zero-failure” standard.

Deeply Rooted in Scenarios, Empowering Global High-Value Applications

Benefiting from the wide bandgap characteristics inherent to SiC material, Oriental Semiconductor ‘s SiC MOSFETs feature low on-resistance, high switching frequency, excellent RDS(on) temperature stability, and low reverse recovery charge. These attributes deliver significant advantages in high-frequency, high-temperature, and high-efficiency applications, injecting robust power into the following high-value sectors:

Data Centers

In HVDC server power systems, efficiency is boosted to over 98%, providing a sustainable efficiency engine for data centers worldwide.

New Energy Vehicles

In OBC (On-Board Charger) and DC-DC converter applications, charging efficiency is improved and system volume is reduced, redefining the charging experience for electric vehicles.

Photovoltaic & Energy Storage

In string inverters and energy storage converters (PCS), switching losses are reduced, significantly improving energy conversion efficiency and system lifespan.

Domestic Breakthrough, Driving a New Industrial Transformation

With its three core advantages of “high reliability, high adaptability, and high cost-performance”, Oriental Semiconductor has successfully filled the market gap for domestic high-performance SiC devices. It has not only gained profound recognition from leading international customers but also marked the official entry of China’s power semiconductor industry into the global first echelon.

“We are not just manufacturing products; we are defining the future,” said Gong Yi, CEO of Oriental Semiconductor. “The success of Oriental Semiconductor ‘s SiC devices is a key milestone for the domestic semiconductor industry, transitioning from ‘catching up’ to ‘running neck-and-neck’ and ultimately achieving ‘leading’.”

Fostering Ecological Integration, Charting a New Blueprint for the Future

Looking ahead, Oriental Semiconductor will continue to deepen its focus on core SiC device technologies and application ecosystems. By collaborating with top global customers and partners, the company will accelerate the full-scale adoption of domestic power semiconductors in strategic sectors such as next-generation data centers, new energy, and intelligent manufacturing. Guided by the “Dual Carbon” goals, Oriental Semiconductor is leveraging technological innovation as its driving force to propel the global power electronics industry toward new heights of greater efficiency and reliability.